2025
226. S. H. Lee, D. Jeon, Sung-Nam Lee*, “ Gate-tunable logic and memory inversion via field-effect and conductive filament switching in Ga2O3 synaptic devices”, Materials Today Physics, V59, 101894 (2025)
225. D. Jeon, S. H. Lee, J. B. Cho, K. B. Kim, Sung-Nam Lee*, “Substrate Orientation-Dependent Synaptic Plasticity and Visual MemoryinSol–Gel-Derived ZnO Optoelectronic Devices” Materials, V18, 04377 (2025)
224. S. H. Lee, D. Jeon, Sung-Nam Lee*, “Filamentary Gate-Controlled Long-Term Memory in CNT-Based Optoelectronic Synaptic Devices for Neuromorphic Applications”, Adv. Mater. Tech. e00879 (2025)
223. H. J. Lee, S. H. Lee, D. Jeon, Sung-Nam Lee*, “Filamentary gate-tunable Ga2O3 optoelectronic synapses for energy efficient neuromorphic computing”, J. Alloys. Compls., V1037, 182220 (2025)
222. D. Jeon, S. H. Lee, Sung-Nam Lee*, "Enhanced Optoelectronic Synaptic Performance in Sol-Gel Derived Al-doped ZnO Thin Film Device", Materials, V8, 2931 (2025)
221. D. Jeon, S. H. Lee, Sung-Nam Lee*, ”Gate-controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications”, Nanomaterials, V15, 908 (2025)
220. S. H. Lee. D. J. Sung-Nam Lee*. “Synaptic plasticity and memory retention in ZnO-CNT nanocomposite optoelectronic synaptic devices“, Materials, V18, 2293, (2025)
219. S. H. Lee, D. Jeon, G. W. Lee, Sung-Nam Lee*, “Monolithic GaN-based dual-quantum-well LEDs with size controlled color-tunable white light emission”, Materials, V18, 2140, (2025)
218. J. Choi, S. H. Lee, T. Kim, K. Min, Sung-Nam Lee*, “Enhanced resistive switching and conduction mechanisms in silk fibroin-based memristors with Ag nanoparticles for bio-neuromorphic applications”, Nanomaterials, V15, 517 (2025)
217. J. Choi, S. H. Lee, T. Kim, K. Min, Sung-Nam Lee*, “Capacitance and dielectric properties of spin-coated silk fibroin thin films for bioelectronic capacitors”, Materials, V18, 1408 (2025)
216. D. Jeon, S. H. Lee, Sung-Nam Lee*, “Enhanced long-term in-sensing memory in ZnO nanoparticle-based optoelectronic synaptic devices through thermal treatment” Materials, V 18, 1321 (2025)
215. H. J. Lee, J. H. Kim, S. H. Lee, T. Noh, S. E. Ahn, Sung-Nam Lee,“Ultraviolet to red wavelength-dependent gallium oxide memristor-based multi-level optoelectronic synapse device”, J. Alloys. Comps. V1017, 179053 (2025)
214. D. W. Hong, W. G. Hong, S. H. Kim, Sung-Nam Lee*,” Effect of interface structure on the efficiency enhancement of Al-PDMS triboelectric nanogenerator”, J. Korean. Inst. Electr. Electron. Mater. Eng. V38, 107 (2025)
2024
213. H. J. Lee, J. H. Kim, S. H. Lee, Sung-Nam Lee, „Ga2O3-based optoelectronic memristor and memcapacitor synapse for in-memory sensing and computing applications”, Nanomaterials, V4, 1972 (2024).
212. H. J. Kim, S. H. Lee, D. B. Jeon, Sung-Nam Lee*, “High performance Sol-gel derived CNT-ZnO nanocomposite-based photodetectors with controlled surface wrinkles”, Materials, V17, 5325 (2024)
211. S. H. Lee, H. J. Lee, H. J. Kim, Sung-Nam Lee*, “Enhancing long-term memory in carbon-nanotube-based optoelectronic synaptic devices for neuromorphic computing”, Nanomaterials, V14, 01501 (2024)
210. H. J. Lee, J. H. Kim, H. J. Kim, Sung-Nam Lee*,”Improvements in resistive and capacitive switching behaviors in Ga2O3 memristors via high-temperature annealing process”, Materials, V12, 2727 (2024).
209. D. C. Choi, S. H. Lee, Sung-Nam Lee*, “High efficiency flat-type GaN-based light-emitting diodes with multiple local breakdown conductive channels”, Mater. V17, 2700 (2024)
208. S. K. Min, Sung-Nam Lee, M. J. Kim, K. B. Kim, “Development of electroforming technology for flexible metal substrates for high efficiency double-sided electronic devices”, Mat. Today Comms. V39, 108784 (2024)
207. J. H. Kim, H. J. Lee, H. J. Kim, J. Y. Choi, J. H. Oh, D. C. Choi, J. Byun, S. E. Ahn, Sung-Nam Lee*, “Oxide semiconductor memristor-based optoelectronic synaptic devices: Enabling quaternary memory storage”, Advanced Electronic Materials, 2300863 (2024).
206. D. C. Choi, Y. S. Kim, K. B. Kim, Sung-Nam Lee*, “Spontaneous emission studies of blue and green InGaN-based light emitting diodes and laser diodes”, Photonics, V11, 00135, (2024)
2023
205. H. J. Lee, J. H. Kim, J. Y. Choi, Sung-Nam Lee*, “Resistive switching-dependent capacitance behaviors of gallium oxide-based memristors grown by radio frequency sputter”, Heliyon. V9, e23157 (2023)
204. S. H. Baek, D. C. Choi, Y. S. Kim, H. Na, Sung-Nam Lee*, “The correlation between surface V-shaped defects and local breakdown phenomenon in GaN-based LEDs”, Photonics, V10, 01103 (2023)
203. T. M. Kim, H. W. Kim, J. H. Yoon, M. H. Kim, D. B. Jeon, D. C. Choi, Sung-Nam Lee*, “Enhancing electrical and optical properties in mechanoluminescent flexible nanocomposite based on ZnS:Cu-PDMS by mixing CNTs”, J. Korean. Inst. Electr. Electron. Mater. Eng. V36, N5, 530 (2023)
202. J. H. Oh, J. H. Kim, K. J. Kim, Y. H. Kim, K. K. Kim, Sung-Nam Lee*, “Enhanced long term memory properties of ZnO nanoparticles-based optical synaptic devices for neuromorphic computing”, Advanced Intelligent systems, 2300350 (2023)
201. G. W. Lee, J. H. Oh, Sung-Nam Lee*, “Pulse-current controlled monolithic full-color nitride-based light-emitting diodes”, Advanced optical materials, 2301472 (2023)
200. J. Y. Choi, G. W. Lee, Sung-Nam Lee*, “High performance self-assembled ZnO nanowrinkle network structured photodetectors”, Phys. Status Solidi-A, 2300338 (2023)
199. J. H. Oh, S. H. Baek, S. U. Shin, K. T. Min, Sung-Nam Lee*, “High-efficiency flat-type nitride-based micro-light emitting diodes using local breakdown conductive channel”, J. Alloys. Comps. V956, 170239 (2023)
198. J. H. Kim, J. Y. Choi, H. S. Na, Sung-Nam Lee*, “High-efficiency ZnO-based ultraviolet photodetector with integrated single walled carbon nanotube thin-film heater”, Advanced Materials Interface, 2300176 (2023)
197. J. H. Lee, T. Y. Choi, H. S. Cheon, H. Y. Youn, G. W. Lee, Sung-Nam Lee*, H. K. Kim*, ‘Conformal and transparent Al2O3 passivation coating via atomic layer deposition for high aspect ratio Ag network electrode”, Metals, V13, 00528 (2023).
196. J. H. Oh, S. B. Cho, I. K. Park, Sung-Nam Lee*, “Monolithic multicolor emissions of InGaN-based hybrid light-emitting diodes using CsPbBr3 Perovskite green quantum dots”, Materials, V16, 1290 (2023).
2022
195. H. W. Kim, Y. C. Na, J. Park, Sung-Nam Lee*, “Microdisc-type multicolor semipolar nitride-based light-emitting diodes”, ACS Appl. Nano. Mater. V5,9334 (2022)
194. G. W. Lee, J. H. Oh, Sung-Nam Lee*, “Surface structure-controlled monolithic multiple color semipolar GaN-based light-emitting diodes”, Appl. Sci. Converg. Technol. V31, 56 (2022)
193. J. Cho, G. W. Lee, Y. Ch. Na, J. H. Kim, J. E. Lee, J. H. Choi, Sung-Nam Lee*, “A study on the growth temperature of atomic layer deposition for photocurrent of ZnO-based transparent flexible ultraviolet photodetector”, J. Kor. Electric. Electron. Mat. Eng. V35, 80 (2022)
192 G. W. Lee, Y. C. Na, Sung-Nam Lee*, “Self-assembled nanowrinkle-network-structured transparent conductive zinc oxide for high efficiency inorganic light-emitting diode”, Adv. Mat. Interface. V9, 2101460 (2022).
191. S. H. Baek, H. W. Kim, G. W. Lee, Sung-Nam Lee*, “Monolithic multi-color tunnable inorganic light-emitting diode”, Adv. Electron. Mat. V8, 2100598 (2022)
2021
190. H. Khachatryan, Sung-Nam Lee, K. B. Kim, M. J. Kim, “Temporary bonding of thin metal foil to a glass substrate using glass powder for fabricating optical sensor”, J. Korean Phys. Soc. V79, 12 (2021)
189. S. H. Baek, G. W. Lee, C. Y. Choi, Sung-Nam Lee*, “Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor”, Sci. Rep. V11, 7172 (2021)
2020
188. G. W. Lee, S. H. Baek, H. W. Kim, Sung-Nam Lee*, “A high-photocurrent and fast response polarity controlled ZnO-based UV photodetector grown by a sol-gel process”, Phys. Stat. Solidi-RRL, 2000501 (2020)
187. P. R. Sekhar Reddy, V. Janardhanam, K. H. Shim, Sung-Nam Lee, A. A. Kumar, V. R. Reddy, C. J. Choi, “Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au-Cu Phthalocyanine interlayer”, Thin Solid Films, V713, 138343 (2020)
186. K. B. Kim, Sung-Nam Lee, Y. H. Kim, M. Kim, “Three dimensional characteristics of the photonic quantum ring laser”, Appl. Sci. Converg. Technol. V29, 67 (2020)
185. S. Jeong, Sung-Nam Lee, C. J. Choi, H. Kim, “Enhancement optical output power of AlGaN/GaN ultraviolet light-emitting diodes fabricated with breakdown induced conductive channels”, J. Cer. Proc. Res. V21, s23 (2020)
184. J. H. Choi, S. H. Baek, H. W. Kim, H. Na, Sung-Nam Lee*, “Indium localization-induced red, green and blue emissions of semipolar (11-22) GaN-based light-emitting diodes”, Phys. Stat. Solidi. A, 2000219 (2020)
183. V. Janardhanam, I. Jyothi, Y. Kim, Sung-Nam Lee, H. J. Yun, W. K. Hong, C. J. Choi, “Carrier conduction mechanism of WSe2/p-type Ge epilayer heteojunction depending on the measurement temperature and applied bias”, J. Alloys. Comps. V842, 155843 (2020)
182. K. R. Song, C. Y. Cho, Sung-Nam Lee*, “Effect of a patterned sapphire on indium localization in semipolar (11-22) GaN-based light-emitting diodes”, Thin Solid Films, V 707, 138077 (2020)
181. H. K. Lee, H. J. Yun, K. H. Shim, H. G. Park, T. H. Jang, Sung-Nam Lee, C. J. Choi, “Improvement of dry etching-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments”, App. Surf. Sci. V506, 144673 (2020)
180. H. W. Kim, S. H. Baek, Sung-Nam Lee*, “Surface plasmon-enhanced high-performance ZnO/Ni/ZnO ultraviolet photodetectors”, Phys. Stat. Solidi-RRL, 1900685 (2020)
179. P. R. Sekhar Reddy, V. Janardhanm, H. K. Lee, K. H. Shim, Sung-Nam Lee, V. Rajagopal Reddy, C. J. Choi, “Schottky barrier parameters and low-frequency noise characteristics of Au/Ni contact to n-type β-Ga2O3”, J. Elctron. Mat. V49, 297 (2020)
178. D. Baek, K. H. Shim, Sung-Nam Lee, W. K. Hong, C. J. Choi, “Suppression of phosphorous out-diffusion in PH3 plasma immersion ion-implantated Germanium epilayer grown on Silicon (100) substrate through SiOx capping layer”, Mat. Transactions, V 61, 195 (2020)
177. P. R. Sekhar Reddy, V. Janardhanam, K. H. Shim, V. Rajagopa Reddy, Sung-Nam Lee, S. J. Park, C. J. choi, “Temperature dependent schottky barrier parameters of Ni/Au on n-type (002) β-Ga2O3 Schottky barrier diode”, Vacuum, V 171, 109012 (2020)
2019
176. H. Khachatryan, H. W. Kim, Sung-Nam Lee, M. J. Kim, K. B. Kim, “Sacrificial layer for lift-off process for flexible display production”, Vacuum, V170, 108968 (2019)
175. S. H. Baek, H. J. Lee, Sung-Nam Lee*, "High performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel” Scientific Reports, V9, 13654 (2019)
174. H. J. Lee, S. H. Baek, H. Na, Sung-Nam Lee*, “Effect of a patterned sapphire substrate on InGaN-based p-i-n ultraviolet photodetectors", J. Korean Phys. Soc., V 75, 362 (2019).
173. M. Zumuukhorol, S. Boldbaatar, K. H. Shim, C. J. Choi, Z. Khurelbaatar, Sung-Nam Lee, "Variation of dark and photo currents of metal-semiconductor-metal photodetectors fabricated on Ge epilayer grown on Si substrate caused by the dimension of intergitated Pt finger electrodes", J. Korean Phys. Soc. V74, 713 (2019)
172. M. Uma, N. Balaram, P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, H. J. Yun, Sung-Nam Lee, C. J. Choi, “Structural, chemical and electrical properties of Au/La2O3/n-GaN MIS junction with a high-k lanthanum oxide insulating layer”, J. Electron. Mat. V48 , 4217 (2019)
171. V. Janardhanam, I. Jyothi, Sung-Nam Lee, V. Rajagopal Reddy, C. J. Choi, "Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization” Thin Solid Films, V676, 252 (2009)
170. H. Khachatryan, S. H. Baek, Sung-Nam Lee, H. K. Kim, M. Kim, K. B. Kim, “Metal to glass sealing using glass powder” : Ion induced crystallization of glass”, Mat. Chem. Phys. V226, 331 (2019)
169. J. Park, Sung-Nam Lee*, “Enhancement of light extraction efficiency in the GaN-based light-emitting diodes by selective growth of ZnO nanorods”, Appl Phys. A, V125, 104 (2019)
168. H. Khachatryan, Sung-Nam Lee, K. B. Kim, M. Kim, “Deposition of Al thin film on steel substrate: The role of thickness on crystallization and grain growth”, Metal, V9, 12 (2019)
167. S. Jeong, M. S. Kim, Sung-Nam Lee, H. Kim, “Forward and reverse current aging of GaN-based light-emitting diodes fabricated with Ag-based reflective electrodes”, Mat. Sci. Semicon. Proc. V90, 72 (2019)
166. V. Janardhanam, H. J. Yun, I. Jyothi, S. H. Yuk, Sung-Nam Lee, J. Won, C. J. Choi, “Fermi-level pinning in metal/Ge interface using oxygen plasma treatment”, Appl. Surf. Sci. V463, 91 (2019)
2018
165. S. Jeong, H. Kim, Sung-Nam Lee, “Analysis of deep trap states in GaN/InGaN ultraviolet light-emitting diodes after electrical stress” J. Korean Phys. Soc. V73, 1879 (2018)
164. S. H. Han, S. H. Baek, H. J. Lee, Sung-Nam Lee*, “Breakdown-induced conductive channel for III-nitride light-emitting devices”, Sci. Rep. V8, 16547 (2018)
163. V. Janardhanam, S. H. Yuk, K. H. Shim, K. Y. Lim, C. J. Choi, Sung-Nam Lee, “Current transport and 1/f noise characteristics in ferromagnetic permalloy/n-type Ge schottky contact”, J. Korean Phys. Soc. V73, 605 (2018)
162. V. Janardhanam, H.-J. Yun, I. Jyothi, H.-K. Lee, Sung-Nam Lee, J. Won and C.-J. Choi, “Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment”, Electron. Lett., V54, 897 (2018)
161. V. Janardhanam, I. Jyothi, P.R. Sekhar Reddy, Jaehee Cho, Jeong-Mook Cho, Chel-Jong Choi, Sung-Nam Lee, V. Rajagopal Reddy, “Double Gaussian barrier distribution of permalloy (Ni0.8Fe0.2) Schottky contacts to n-type GaN”, Superlattice and Microsctructures, V120, 508 (2018)
160. H. Khachatryan, Sung-Nam Lee, K. B. Kim, H. K. Kim, M. Kim, “Al thin film : The effect of substrate type on Al film formation and morphology” J. Phys. Chem. Solids, V 122, 109 (2018)
159. S. H. Baek, H. J. Lee, Sung-Nam Lee*, “Thickness dependence of crystal and optical characterization on ZnO thin film grown by atomic layer deposition”, AIP Advances, V8, 065306 (2018)
158. Y. Kim. H. Na, Sung-Nam Lee*, “Lattice-matched AlInGaN electron blocking layer embedded in high performance GaN-based light-emitting devices”, J. Korean. Phys. Soc., V72, 1194 (2018)
157. S. Shervin, S. K. Oh, H. J. Park, K. H. Lee, M. Asadirad, S. H. Kim, J. Kim, S. Pouladi, Sung-Nam Lee, X. Li, J. S. Kwak, J.H. Ryou, “Flexible deep-ultraviolet light-emitting diodes for significantly improvement of quantum efficiencies by external bending”, J. Phys. D, V51, 105105 (201803)
156. H. Khachatryan, H. P. Kim, Sung-Nam Lee, H. K. Kim, M. Kim, K. B. Kim, J. Jang, “Novel method for dry etching Ch3NH3PbI3 perovskite films utilizing atmospheric hydrogen plasma”, Mat. Sci. Semicon. Proc., V75, 1 (201803)
155. H. Na, K. R. Song, J. H. Lee, S. H. Han, Sung-Nam Lee*, “Comparative study of epitaxial lateral overgrowth on semipolar (11-22) GaN by using stripe and hexagon SiO2 mask patterns”, V72, 254 (201802)
154. S. Jeong, Sung-Nam Lee, H. Kim, “Formation of ohmic contact to semiconductor (11-22) p-GaN by electrical breakdown method”, J. Korean. Phys. Soc., V72, 90 (20180108)
153. R. R. Sekhar Reddy, V. Janardhanam, I. Jyothi, C. S. Harsha, V. Rajagopal Reddy, Sung-Nam Lee, J. Won, C. J. Choi, “Effect of copper phthalocyanine thickness on surface morphology optical and electrical properties of Au/CuPc/n-Si heterojunction”, Applied Physics A, V124, 115 (2018)
2017
152. P. R. Sekhar Reddy, V. Janardhanam, I. Jyothi, H. S. Chang, Sung-Nam Lee, M. S. Lee, V. Rajagopal. Reddy, C. J. Choi, “Microstructural and electrical properties of Al/n-type Si Schoktty diodes with Au-CuPc nanocomposite films as interlayer”, Superlattice and Microstr., V111, 506 (20171106)
151. I. J.yothi, H. K. Lee, V. Janardhanam, Sung-Nam Lee, C. J. Choi, “Double barrier height nature of Ti/p-type strained Si-on-insulator Schottky diode and its low frequency noise characteristics”, J. Nanosci. Nanotech., V17, 7107 (20171016)
150. M. Zumuukhorol, Z. Khurelbaatar, J. H. Kim, K. H. Shim, Sung-Nam Lee, S. J. Leem, C. J. Choi, “Effect of a SiO2 anti-reflection layer on the optoelectronic properties of Germanium metal-semiconductor-metal photodetectors”, J. Semicon. Tech. Sci., V17, 483 (201708)
149. W. Wang, S. Servin, S. K. Oh, J. Chen, Y. Huai, S. Pouladi, H. Kim, Sung-Nam Lee, J. H. Ryou, “Flexible AlGaInN/GaN heterostructures for high hole mobility transistors”, IEEE, Electron Dev. Lett., V38, 1086 (201708)
148. V. Janardhanam, I. Jyothi, J. H. Lee, H. J. Yun, J. H. Won, Y. B. Lee, Sung-Nam Lee, C. J. Choi, “Electrical properties of a Cu-germanide Schottky contact to n-tye Ge depending on its microstructural evolution driven by rapid thermal annealing”, Thin Solid Film, V 632, 23 (201704)
147. V. Janardhanam, I. Jyothi, S. H. Yuk, C. J. Choi, H. J. Yun, J. Won, W. G. Hong, Sung-Nam Lee, V. R. Reddy, “Modification of Schottky barrier properties of A./p-type Si Schottky rectifiers with graphene-oxide-doped poly (3,4-ethylenedioxythiophene:poly (styrene sulfonate) interlayer”, J. Vac. Sci. Tech. B, V35, 021212 (201702)
146. M. Asadirad, S. Pouladi, S. Shervin, S. K. Oh, K. H. Lee, J. Kim, Sung-Nam Lee, Y. Gao, P. Dutta, V. Selvamanickam, J. H. Ryou, “Numerical simulation for operation of flexible thin film transistors with bending”, IEEE Electron. Dev. Lett., V38, 217 (201702)
145. M. Zumunnkhorol, Z. Khurelbaatar, S. H. Yuk, J. Won, Sung-Nam Lee, C. J. Choi, “Effects of finger dimension on low frequency noise and optoelectronic properties of Ge metal-semiconducto-metal photodetectors with interdigitated Pt finger electrodes”, Microelectron. Reliability, V69, 60 (201702)
144. J. H. Lee, S. H. Han, K. R. Song, J. H. Ryou, H. Na, Sung-Nam Lee*, “Effect of SiO2 hexagonal pattern on the crystal and optical properties of epitaxial lateral overgrown semipolar (11-22) GaN film”, Microelectron. Eng. V168, 32 (201701)
2016
143. V. Jananrdhanam, I. Jyothi, S. H. Yuk, C. J. Choi, Sung-Nam Lee*, V. Rajagopal Reddy, “Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes”, J. Korean. Phys. Soc., V69, 1321 (201610)
142. P. R. Sekhar Peddy, V. Jananrdhanam, I. Jyothi, S. H. Yuk, V. R. Reddy, J. C. Jeong, Sung-Nam Lee and C. J. Choi, “Modification of Schottky barrier properties of Ti/P-type InP Schottky diode by polyaniline (PANI) organic interlayer”, J. Semicon. Tech. Sci., v16, 664 (201610)
141. J. W. Kim, Sung-Nam Lee, M. J. Park, J. S. Kwak, K. B. Kim, J. M. Lee, “Formation of laser diode ridges by the dry-etching Pd and AlGaN/GaN superlattices”, Surface & Coating Tech., V307, 1107 (201610)
140. I. Juothi, V. JAnardhanam, J. H. Kim, H. J. Yun, J. C. Jeong, H. Hong, Sung-Nam Lee, C. J. Choi, “Electrical and structural properties of Au/Yb Schottky contact on p-type GaN as a function of the annealing temperature”, J. Alloy. Comps, 688, 875-881 (201610)
139. H. K. Lee, K, H. Shin, H. B. Hong, C. H. Lee, H. J. Yoon, Sung-Nam Lee, C. J. Choi, “Effect of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode”, Microelectronic Engineering , V163, 26-31 (2016)
138. S. H. Kim, K. H. Lee, H. J. Park, S. Servin, M. Asadirad, Sung-Nam Lee, J. S. Kwak, J. H. Ryou, “Patterned Ga2O3 for current blocking optical scattering in visible light-emitting diode”, Physica status Solidi a , V213, 2769-2772 (2016)
137. H. C. Lee, K. B. Kim, Sung-Nam Lee, J. Kim, M. J. Kim, “Impact of surface roughness for OLED device properties on steel substrates”, J. Nanoeng. Nanomanufacturing, V6, 146 (201606)
136. H. S. Son, N. J. Choi, K. B. Kim, M. J. Kim, Sung-Nam Lee*, “Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using hydrothermal synthesis”, Mater. Res. Bull. V82, 50-54 (2016)
135. S. H. Kim, S. Singh, S. K. Oh, D. K. Lee, K. H. Lee, S. Shervin, M. Asadirad, V. Venkateswaran, K. Olenick, J. A. Olenick, Sung-Nam Lee, J. S. Kwak, A. MAvrokefalos, J. H. Ryou, “Visible flip-chip light-emitting diodes on flexible ceramic substrate with improved thermal management”, IEEE, Elect. Dev. Lett. V37, 615 (2016. 05)
134. Z. Khurelbaatar, Y. H. Kil, K. H. Shim, H. Cho, M. J. Kim, Sung-Nam Lee, J. C. Jeong, H. ong, C. J. Choi, “Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode”, Superlattice and Mater. V92, 306 (2016)
133. K. W. Kim, N. J. Choi, K. B. Kim, M. Kim, Sung-Nam Lee*, “Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11-22) GaN-based light-emitting diodes”, J. Alloys Comp., V666, 88 (2016)
132. K. M. Song, S. Lee, G. J. Jeong, Sung-Nam Lee*, “Observation of applied bias dependent dot-like luminescence in GaInN-based light emitting diodes”, J. Alloys Comp., V660, 392 (2016)
131. J. Kim, B. K. Kang, Sung-Nam Lee, J. Choi, K. M. Song, “Improved light-output power of InGaN-based multiple quantum well light-emitting diodes by GaN/InAlGaN/GaN multibarrier”, Curr. Appl. Phys., V 16, 150 (2016)
130. I. Jyothi, V. Janardhanam, J. Y. Hwang, W. K. Lee, Y. C. Park, H. C. Kang, Sung-Nam Lee, C. J. Choi, “Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer”, J. Alloys Comp., V655, 198 (2016)
129. S. Jang, P. Son, J. Kim, Sung-Nam Lee, K. H. Baik, “Hydrogen sensitivity Schottky diode using semipolar (11-22) AlGaN/GaN heterostructures”, Sensor and Actuators B, V222, 43, (2016)
128. K. Kim, Y. Gil, S. Jeong, M. Oh, H. Kim, Sung-Nam Lee, K. S. Ahn, “ZnO transparent conductive electrodes embedded with Pt nanoclusters for high efficiency GaN-based light emitting diode”, J. Korean, Phys. Soc., V 68, 274 (2016)
127. K. B. Kim, M. J. Kim, G. Jin, Sung-Nam Lee, “Effect of solid phase crystallization and gate insulator thickness on device properties of poly-Si thin film transistors”, J. Nano. Optoelectronic. V11, 122 (2016)
2015
126. J. Y. Park, K. M. Song, Y. S. Min, C. J. Choi, Y. S. kim, Sung-Nam Lee*, “Nanostructures of Indium Gallium Nitride Grown on Carbon Nanotubes”, Scientific Reports V5, 16612 (2015)
125. Z. Khurelbaatar, M. S. Kang, K. H. Shim, H. J. Yun, J. Lee, H. Hong, S. Y. Chang, Sung-Nam Lee, C. J. Choi, “Temperature dependent current-voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer”, J. Alloys Comp., V650, 658 (2015. 8. 8)
124. M. J. Kim, K. B. Kim, D. Lee, Sung-Nam Lee, J. M. Lee, “Effects of rapid thermal annealing for E-beam evaporated Ag films on stainless steel substrates”, Surf. & Coating Tech., V278, 18 (2015. 08.04)
123. K. B. Kim, D. Y. Lee, Sung-Nam Lee, J. M. Lee, “CIGS solar cell devices on steel substrates coated with Na containing AlPO4 “, Journal of Physics and Chemistry of Solids , V86, 223 (2015. 07.22.)
122. G. J. Jeong, H. D. Yoo, K. K. Kim, Sung-Nam Lee*, “Effect of the multi-chip array structure on the optical performance of GaN-based light-emitting diodes”, J. Vac. Sci. Tech. B, V33, 051205 (2015. 07.27.)
121. S. H. Jang, P. Son, J. Kim, Sung-Nam Lee, K. H. Baik, “K doping effect on structural and optical properties of ZnO nanorods grown on semipolar (11-22) GaN films using a hydrothermal growth method”, Opt. Mat. Exp., V5, 1621 (2015. 6.24.)
120. G. J. Jeong, J. H. Lee, S. H. Han, W. Y. Jin, J. W. Kang, Sung-Nam Lee*, “Silver nanowires for transparent conductive electrode to GaN-based light-emitting didoes”, Appl. Phys. Lett. V106, 031118 (2015. 01)
119. J. K. Kim, Sung-Nam Lee, K. M. Song, J. S. Yoon, J. M. Lee, “Crystallographic Wet chemical etching of semipolar GaN (11-22) grown on m-plane sapphire substrates”, J. Nanosci. Nanotech. V15, 5250 (2015. 01)
2014
118. N. J. Choi, H. S. Son, H. J. Choi, K. K. Kim, Sung-Nam Lee*, “Comparative studies of nonpolar (10-10) ZnO films grown by atomic layer deposition and radio frequency magnetron sputter”, J. Korean Phys. Soc., V65, 417 (2014, 08.03)
117. J. K. Kim, D. M. Lee, Sung-Nam Lee, K. M. Song, J. S. Yoon, J. M. Lee, “Ohmic contact to nonpolar a-plane p-type GaN using Ni/Au”, Jpn. J. Appl. Phys., V53, 05HA04 (2014. 05)
116. J. H. Lee, S. H. Han, K. R. Song, Sung-Nam Lee*, “Effect of Si doping concentration on the optical and electrical improvements of semipolar (11-22) GaN-based light emitting diodes”, J. Alloys Comp., V598, 85 (2014. 03)
115. K. H. Baik, H. Kim, Sung-Nam Lee, E. Lim, S. J. Pearton, F. Ren, S. Jang, “Hydrogen sensing characteristics of semipolar (11-22) GaN schottky diodes”, Appl. Phys. Lett. V104, 072103 (2014)
114. H. Kim, Sung-Nam Lee*, “Homogeneous In distribution of InGaN/GaN quantum wells in high performance GaN-based light-emitting devices”, Appl. Mech. Mat. V472, 715 (2014)
113. N. J. Choi, K. W. Kim, H. S. Son, Sung-Nam Lee*, “Optical and electrical characterization of AZO films grown c-plane sapphire substrates by using atomic layer deposition”, Electron. Mat. Lett. V10, 259 (2014)
2013
112. H. R. Yi, K. R. Song, S. H. Han, J. H. Lee, Sung-Nam Lee*, “Study of crystallographic tilt and surface morphology on epitaxial lateral overgrown semipolar (11-22) GaN”, J. Vac. Sci. Tech. V31, 061208 (2013. 11.)
111. K. R. Song, J. H. Lee, S. H. Han, H. R. Yi, Sung-Nam Lee*, “Study of epitaxial lateral overgrowth of semipolar (11-22) GaN by using different SiO2 pattern sizes”, Mat. Res. Bul. V48, 5088 (2013. 11.)
110. K. W. Kim, H. S. Son, N. J. Choi, Sung-Nam Lee*, “Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrate by using atomic layer deposition”, Thin Sol. Film. V546, 114 (2013. 11.)
109. N. J. Choi, H. S. Son, Sung-Nam Lee*, “Polarization control and characterization of ZnO film grown by (0001) and (101) sapphire substrate”, J. LED (2013. 12.)
108. K. R. Song, D. S. Oh, Sung-Nam Lee*, “Optical and crystal improvements of semipolar (11- 22) GaN/m-sapphire by in-situ thermal etching process”, Current. Appl. Phys. V13, 1643 (2013. 10.)
107. S. Jung, Sung-Nam Lee, K. S. Ahn, H. Kim, “Surface fermi level pinning of semipolar (11-22) n-type GaN surface grown on m-plane sapphire substrate”, Electron. Mater. Lett. V9, 609 (2013.09.)
106. S. Jung, K. K. Kim, Sung-Nam Lee, H. Kim, “Electrical characteristics of Pt schttoky contact to semipolar (11-22) n-GaN depending on Si doping concentration”, Appl. Mech. Mat., V 404, 146 (2013. 09.)
105. S. M. Jung, K. R. Song, Sung-Nam Lee*, H. Kim*, “Wet chemical etching of semipolar GaN planes to obtain brighter and cost competitive light emitters”, Adv. Mat. V25, 4470 (2013. 08.)
104. S. M. Jung, Sung-Nam Lee, H. Kim, “Surface states and carrier transport properties at semipolar (11-22) n-type GaN planes”, Appl. Phys. Lett., V102, 151603 (2013)
103. S. H. Han, K. R. Song, J. H. Lee, Sung-Nam Lee*, “Comparative studies of polar (0001) and semipolar (11-22) n-type GaN with different Si doping concentration”, Current. Appl. Phys. V13, s75 (2013. 07.)
102. Y. S. Lee, Sung-Nam Lee, I. K. Park, ”Growth of ZnO hemispheres on silicon by a hydrothermal method”, Cer. Int. , V39, 3043 (2013)
2012
101. S. Oh, Sung-Nam Lee, S. Cho, K. K. Kim, “High efficiency GaN-based light-emitting diode with nano-patterned ZnO surface fabricated by wet process”, J. Nanosci. Nanotech. V12, 5582 (2012)
100. K. W. Kim, K. J. Sun, Sung-Nam Lee*, “Optical and electrical characterizations of ZnO film grown on c-plane sapphire by using atomic layer deposition”, J. Cer. Pros. Res. V13, S2, s291 (2012. 12.03)
99. Sung-Nam Lee*, J. H. Kim, H. S. Kim, “Heteroepitaxial growth of semipolar (11-22) GaN without low temperature GaN buffer layer grown on m-sapphire substrate” , J. Cer. Pros. Res. V13, S2, s251 (2012. 12.03)
98. K. R. Song, D. S. Oh, M. J. Shin, Sung-Nam Lee*, “Comparative study of InGaN/GaN multi-quantum wells in polar (0001) and semipolar (11-22) GaN based light emitting diodes”, J. Cer. Pros. Res. V13, S2, s295 (2012. 12.03)
97. N. B. R. Kan, M. J. Shin, D. S. Oh, K. R. Song, Sung-Nam Lee*, “Study of anisotropic crystal and electrical properties for semipolar (11-22) GaN grown on m-sapphire”, J. Cer. Pros. Res. V13, S2, s390 (2012. 12.03)
96. K. H. Kim, S. W. Lee, J. Kim, Sung-Nam Lee*, “Effect of p-AlGaN electron blocking layer on optical and electrical properties in GaN-based light emitting diodes”, J. Vac. Sci. Tech. B, V30, 061204 (2012. 10. 09)
95. J. Lim, J. H. Kim, Y. J. Yoon, H. Kim, H. G. Yoon, Sung-Nam Lee, J. H. Kim, “All-Inkjet-Printed Metal-Insulator-Metal (MIM) Capacitor”, Current. Appl. Phys, V12, e14 (2012) .
94. S. J. Park, S. W. Lee, H. J. Yoo, J. W. Choi, Sung-Nam Lee*, “Optical improvement of GaN-based light emitting diodes by interfacial Si treatment in InGaN/GaN quantum well structure”, Jpn, J. Appl. Phys. V51, 09MK04 (2012. 9.20)
93. Y. Oh, Sung-Nam Lee, H. K. Kim, J. Kim, “UV assisted chemical sintering of inkjet printed TiO2 photoelectrodes for low temperature flexible dye-sensitized solar cell”, J. Electrochem. Soc. V159, H777 (2012. 8.29)
92. S. Jung, Sung-Nam Lee, K. S. Ahn, H. Kim, “Carrier transport mechanism of a low resistance Ti/Al ohmic contact on (11-22) semipolar n-type GaN”, Jpn, J. Appl. Phys., V51, 061001 (2012. 05.24)
91. S. Jung, Sung-Nam Lee, K. S. Ahn, H. Kim, “Schottky characteristics of Pt contacts on (11-22) semipolar n-type GaN grown on m-plane sapphire substrates”, Elec. Mat. Lett., V8, 17 (2012. 6)
90. K. M. Song, J. M, Kim, B. K. Kang, D. H. Yoon, S. Kang, S. W. Lee, Sung-Nam Lee*, “Characteristics of indium incorporation in InGaN/GaN multi quantum wells grown on a-plane and c-plane GaN”, Appl. Phys. Lett., V100, 212103 (2012. 05)
89. J. W. Lim, B. Y. Jeong, H. G. Yoon, Sung-Nam Lee, J. H. Kim, “Inkjet printing of antimony doped Tin oxide films for transparent conducting electrodes”, J. Nanosci. Nanotech. V12, 1675 (2012. 02)
88. J. W. Lim, J. H. Kim, Y. J. Yoon, H. T. Kim, H. G. Yoon, Sung-Nam Lee, J. H. Kim, “Improvement on relative permittivity of inkjet printed BaTiO2-resin hybrid film by manipulating ceramic powder size distribution”, Int. J. Appl. Ceramic. Tech. V9, 199 (2012. 01)
87. Y. J. Oh, H. G. Yoon, Sung-Nam Lee, H. K. Kim, J. H. Kim, “Inkjet printing of TiO2 co-solvent ink : from uniform ink droplet to TiO2 photoelectrode for dye sensitized solar cells”, J. Electrochem. Soc. V159, b35 (2012.01.)
2011
86. Y. Oh, J. H. Kim, Y. J. Yoon, H. T. Kim, H. G. Yoon, Sung-Nam Lee, J. H. Kim, “Inkjet printing of Al2O3 dots, lines, and films : from uniform dots to uniform films”, Current. Appl. Phys, V11, s359, (2011. 12.)
85. S. J. Shin, D. S. Oh, K. M. Song, Sung-Nam Lee*, “Optical degradation and recovery of semipolar (11-22) GaN on m-sapphire by in-situ thermal etching and a regrowth process”, J. Cer. Proc. Res. V12, S259 (2011. 11.)
84. Hyunsoo Kim, Seongjun Kim, Kyoung-Kook Kim, Sung-Nam Lee, and Kwang-Soon Ahn, “Pt Schottky contacts on amorphous gallium indium zinc oxides”, Jpn. J. Appl. Phys. V50, 105702 (2011. 10.20.)
83. Y. Y. Choi, H. K. Kim, H. W. Koo, T. W. Kim, Sung-Nam Lee, “Flexible ZnSnO3/Ag/ZnSnO3 multilayer electrodes grown by roll to roll sputtering on flexible polyethersulfone substrates”, J. Vac. Sci. Tech. A, V29, 061502 (2011. 09. 12)
82. J. H. Kim, H. Kim, Sung-Nam Lee*, “Thermal degradation of InGaN quantum wells in the violet and blue GaN-based laser diodes”, Current Appl. Phys. V11, 167 (2011. 7. 14)
81. Sung-Nam Lee*, J. H. Kim, H. Kim, “Defect reduction of smipolar (11-22) GaN grown on m-sapphire using epitaxial lateral overgrowth”, J. Electrochem. Soc. V158, H994 (2011. 08. 01)
80. Sung-Nam Lee*, Jihoon Kim, Hyunsoo Kim, “Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire” J. Cryst. Growth, V326, 19 (2011. 07.01)
79. D. S. Oh, J. J. Jang, O. H. Nam, K. M. Song, Sung-Nam Lee*, “Study of green light emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualities”, J. Cryst. Growth, V326, 33 (2011. 07.01)
78. H. Kim, K. K. Kim, Sung-Nam Lee, K. H. Kaik, “Design and fabrication of vertical injection GaN based light-emitting diodes”, Opt. Exp., V19, A937 (2011. 07. 01)
77. K. K. Kim, H. Kim, Sung-Nam Lee, S. Cho, “Structural, optical and electrical properties of e-beam and sputter deposited ITO films for LED applications”, Electron Mat. Lett., V7, 145 (2011. 6. 29)
76. H. Kim, K. K. Kim, Sung-Nam Lee, J. H. Ryou, and R. D. Dupuis, “Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides”, Appl. Phys. Lett., V98, 112107 (2011. 3. 17)
75. H. Kim and Sung-Nam Lee, “Performance characteristics of GaN-based light-emitting diodes fabricated with AgNi, AgCu, and AgAl-alloy reflectors, “J. Vac. Sci. Tech. V29, 011032 (2011. 1. 18)
2010
74. H. Kim, Sung-Nam Lee, J. Choi, “Electrical and optical characterization of GaN-based light emitting diodes fabricated with top emission and flip chip structures”, Mat. Sci in Semi. Process. V13, 180 (2010. 12)
73. S. J. Shin, D. S. Oh, K. M. Song, Sung-Nam Lee*, “Study of thermal etching process for surface and optical properties of semipolar (11-22) GaN/m-sapphire”, J. Light Emitting diode, V2, 4 (2010. 12)
72. Sung-Nam Lee*, J. Kim, K. K. Kim, H. Kim, H. K. Kim, “Thermal stability of Si-doped InGaN multiple-quantum wells for high efficiency light emitting diodes”, J. Appl. Phys., V108, 102813 (2010. 11. 24)
71. M. S. Hwang, J. Kim, H. T. Kim, Y. Yoo, S. Hyun, J. H. Kim, S. N. Lee, J. H. Moon, “Inkjet-printing of non-sintered alumina-resin hybrid films and their dielectric properties”, J. Appl. Phys., V108, 102809 (2010. 11. 24)
70. H. W. Jang, J. Kim, H. T. Kim, Y. J. Yoon, S. N. Lee, H. J. Hwang, J. H. Kim, “Fabrication of nonsintered Alumina-Resin hybrid films by inkject-printing technology”, Jpn. J. Appl. Phys. V49, 071501 (2010. 07. 20)
69. Sung-Nam Lee*, K. K. Kim, J. H. Kim, O. H. Nam, H. Kim, “Structural and optical characterization of (11-22) semipolar GaN on m-plane sapphire without low temperature buffer layer”, Phys. Stat. Solidi., C, V7, 2043 (2010)
68. Hyunsoo Kim, Sung-Nam Lee, “Theoretical consideration on current spreading in GaN-based light-emitting diodes fabricated with top emission geometry”, J. Electrochem. Soc., V157, H562 (2010)
67. H. Kim, K. K. Kim, S. N. Lee, "Enhanced light extraction in GaN-based light emitting diodes fabricated with increased mesa sidewalls", J. Electrochem. Soc., V157, H170（2010．01）
2009
66. Sung-Nam Lee*, H. S. Paek, J. K. Son, H. Kim, K. K. Kim, K. H. Ha, O. H. Nam, Y. Park, "Effects of Mg dopants on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices", J. Electroceram, V23, 406 (2009. 11)
65. J. W. Lee, C. Sone, Y. Park, S. N. Lee, J. H. Ryou, R. D. Dupuis, C. H. Hong, and H. Kim, “High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures”, Appl. Phys. Lett, V95, 011108 (2009. 07. 07)
64. H. Y. Ryu, K. H. Ha, J. K. Son, H. S. Paek, Y. J. Sung, K. S. Kim, H. K. Kim, Y. Park, S. N. Lee, O. H. Nam, “Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer”, J. Appl. Phys., V105, 103012 (2009. 05. 20)
63. H. K. Kim, M. S. Lee, and S. N. Lee, “Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN”, Thin Solid Film, V517, 4039 (2009. 04. 29)
62. H. Kim, J. H. Ryou, D. Russel, T. Jang, Y. Park, S. N. Lee, T. Y. Seong, „Electrical Characteristics of metal contacts to laser-irradiated N-polar n-type GaN”, (IEEE. Electron. Device. Lett., V30, N4, 319 (2009. 04. 01)
61. K. S. Kim, Y. J. Sung, H. S. Paek, S. N. Lee, T. Jang, J. K. Son, Y. Park, “Optical output power-dependent degradation mechanism of 445 nm InGaN blue laser”, Phys. Stat. Solidi. A, V206, 1674 (2009)
60. K. K. Kim, S. D. Lee, H. Kim, J. C. Park, S. N. Lee, Y. Park, S. J. Park, S. W. Kim, "Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution", Appl. Phys. Lett., V94, 071118 (2009. 02. 20)
~2008
59. H. Kim, J. H. Ryou, R. D. Dupuis, S. N. Lee, Y. Park, J. W. Jeon, T. Y. Seong, “Electrical characteristics of contacts to thin film N-polar n-type GaN, Appl. Phys. Lett. V93, 192106 (2008. 11. 11.)
58. H. Kim, S. N. Lee, Y. Park, J. S. Kwak and T. Y. Seong, “Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al Omnidirectional reflectors”, J. Appl. Phys., V104, 053111 (2008. 09. 05.)
57. Sung-Nam Lee*, J. K. Son, H. S. Paek, Y. J. Sung, K. S. Kim, H. K. Kim, H. kim, T. Sakong, Y. Park, K. H. Ha, and O. H. Nam, “High power AlInGaN-based violet laser diode with InGaN optical confinement layers”, Appl. Phys. Lett., V93, 091109 (2008. 09. 03.)
56. Sung-Nam Lee*, H. S. Paek, H. Kim, K. K. Kim, Y. H. Cho, T. Jang, and Y. Park, “Growth and characterization of AlInGaN quaternary protective layer to suppress the thermal damages for InGaN multiple quantum wells”, J. Cryst. Growth, V310, 3881 (2008. 08. 01.)
55. H. Kim, S. N. Lee, Y. Park, J. S. Kwak, and T. Y. Seong, “Metallization contacts to nonpolar a-plane n-type GaN”, Appl. Phys. Lett., V93, N4, 032105 (2008. 07. 23)
54. Sung-Nam Lee*, H.Y. Ryu, H. S. Paek, J.K. Son, Y. J. Sung, K.S. Kim, H.K. Kim, H. Kim, O. H. Nam, K.H. Ha, T. Jang, and Y. Park, “Behaviors of emission wavelength shift for AlInGaN-based bluish-green laser diodes”, IEEE Electron Device Letters, V29, N8, 870 (2008. 07. 22.)
53. H. Y. Ryu, K. H. Ha, J. K. Son, S. N. Lee, H. S. Paek, T. Jang, Y. J. Sung, K. S. Kim, H.K. Kim, Y. Park, and O. H. Nam, “Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics”, Appl. Phys. Lett., V93, 011105 (2008. 07. 10)
52. H. Kim, K. K. Choi, K. K. Kim, J. H. Cho, S. N. Lee, Y. Park, J. S. Kwak, T. Y. Seong, “Enhanced light extraction of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures”, Optics Letters, V33, N11, 1273 (2008. 06. 01.)
51. H. Kim, S. N. Lee, Y. Park, T. Y. Seong, “High efficiency GaN-based light emitting diodes fabricated with metallic hybrid reflectors”, IEEE Electron Device Letters, V29, 582 (2008. 06.01)
50. J. K. Son, S. N. Lee, H. S. Paek, T. Sakong, H. K. Kim, H. Y. Ryu, O. H. Nam, Y. Park, J. S. Hwang, and Y. H. Cho, “Measurement of optical loss variation on thickness of InGaN optical confinement layers of blue-violet-emitting laser diodes”, J. Appl. Phys., V103, 103101 (2008. 05. 16)
49. Sung-Nam Lee*, H. S. Paek, H. Kim, Y. M. Park, T. Jang, Y. Park, “Characterization of a-plane InGaN multiple quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN”, Appl. Phys. Lett. V92. 111106 (2008.03.19.)
48. K. S. Kim, J. K. Son, S. N. Lee, Y. J. Sung, H. S. Paek, H. K. Kim, M. Y. Kim, K. H. Ha, H. Y. Ryu, O.H. Nam, T. Jang, and Y. J. Park, “Characteristics of long wavelength InGaN quantum well laser diodes”, Appl. Phys. Lett., V92, 101103 (2008. 03.10)
47. Sung-Nam Lee*, H. S. Paek, H. Kim, T. Jang, and Y. Park , “Monolithic InGaN-based white light-emitting diodes with blue, green and amber emissions”, Appl. Phys. Lett. V92. 081107 (2008. 02.27.) (Also introduced in newsbreaks inside the April, 2008 issue of the Laser Focus World, V44, N4, 15 : http://www.laserfocusworld.com/display_article/325410/12/none/none/NBrea/Three-wavelength-quantum-well-structures-enable-white-light-LED )
46. H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, H. K. Kim, K. S. Kim, O. H. Nam, Y. J. Park, and J. I. Shim, “High performance blue InGaN laser diodes with single quantum well active layers”, IEEE Photo. Tech. Lett., V19, N21, 1717 (2007. 11. 01.)
45. H. Kim, K. H. Baik, J. H. Cho, K. K. Kim, S. N. Lee, C. Sone, Y. Park, and T. Y. Seong, “Enhanced light output of GaN-based light emitting diodes by using omnidirectional sidewall reflectors”, IEEE Photo. Tech. Lett., V19, N19, 1562 (2007. 10. 01.)
44. Sung-Nam Lee*, H. S. Paek, T. Sakong, J. K. Son O. H. Nam, Y. Park, “Characterization of Si and Mg doping in a-plane GaN grown on r-plane sapphire”, J. Cryst. Growth., V307, 358 (2007. 09. 15.)
43. J. S. Hwang, A. Gokarna, Y. H. Cho, J. K. Son, S. N. Lee, T. Sakong, H. S. Paek, O. H. Nam, Y. Park, and S. H. Park, “Comparative investigation of InGaN quantum well laser diode structures grown on freestanding GaN and sapphire substrates”, J. Appl. Phys., V102, 013508 (2007.07.05.)
42. Sung-Nam Lee*, H. Y. Ryu, H. S. Paek, J. K. Son, T. Sakong, T. Jang, Y. J. Sung, K. S. Kim, K. H. Ha, O. H. Nam, and Y. Park, “Inhomogeniety of InGaN quantum wells in GaN based blue laser diodes”, Phys. Stat. Sol. C, V4, 2788 (2007.06.01.)
41. J. K. Son, T. Sakong, S. N. Lee, H. S. Paek, O. H. Nam, and Y. Park, “Radiative and Non-radiative transitions in InGaN quantum wells of blue/green laser diodes”, Phys. Stat. Sol. C, V4, 2780 (2007.06.01.)
40. J. S. Hwang, A. Gokarna, and Yong-Hoon Cho, J. K. Son, S. N. Lee, T. Sakong, H. S. Paek, O. H. Nam, and Y. Park, “Direct comparison of characteristics of InGaN-based laser diode structures grown on pendeo-epitaxial GaN and sapphire substrates”, Appl. Phys. Lett., V90, 131908 (2007.03.26.)
39. H. S. Kim, K. H. Paek, J. H. Cho, J. W. Lee, S. H. Yoon, H. K. Kim, S. N. Lee, C. Sone, and Y. Park, T. Y. Sung, “High reflectance and thermal stable AgCu alloy reflectors for GaN-based light emitting diodes”, IEEE Photo. Tech. Lett., V19, N5, 336 (2007.03.01.)
38. T. Jang, O. H. Nam, K. H. Ha, S. N. Lee, J. K. Son, H. Y. Ryu, K. S. Kim, H. S. Paek, Y. J. Sung, H. G. Kim, S. H. Chae, Y. H. Kim, and Y. Park, “Recent achievements of AlInGaN based laser diodes in blue and green wavelength”, Proc. SPIE Vol. 6473, 64730X (2007.02.08)
37. J. K. Son, T. Sakong, S. N. Lee, H. S. Paek, H. Ryu, K. H. Ha, O. Nam, Y. Park, J. S. Hwang, and Y. H. Cho, "Comprehensive study of time-lapsed peak shift in InGaN quantum well structure: Discrimination of localization effect from internal field effect", Appl. Phys. Lett. V90, 051918 (2007.01.29.)
36. Sung-Nam Lee*, H. S. Paek, H. Y. Ryu, T. Sakong, J. K. Son, T. Jang, K. K. Choi, Y. J. Sung, Y. H. Kim, H. K. Kim, S. H. Chae, K. H. Ha, J. H. Chae, K. S. Kim, O. H. Nam, and Y. Park, “Micro-crack free high power blue-violet GaN based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire”, J. Cryst. Growth, V298, 695 (2007.01.15.)
35. Sung-Nam Lee*, H. S. Paek, J. K. Son, T. Sakong, Y. N. Kwon, O. H. Nam, and Y. Park, “Surface modification and optical properties of blue InGaN SQW by in-situ thermal treatments”, Phys. Stat. sol. C, V4, 141 (2007.01.08.)
34. J. K. Son, T. Sakong, S. N. Lee, H. S. Paek, O. H. Nam, and Y. Park, “Investigation of internal field effect and blue-shift in InGaN-based blue laser diodes by time-resolved optical technique” Phys. Stat. sol. C, V4, 192 (2007.01.08.)
33. H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. K. Son, J. H. Chae, K. S. Kim, K. K. Choi, H. S. Paek. Y. J. Sung, T. Sakong, O. H. Nam, and Y. Park, “Negative characteristic temperature of InGaN blue multiple-quantum well laser diodes”, Phys. Stat. sol. C, V4, 70 (2007.01.08.)
32. K-H Joo, C. R. Moon, S-N Lee, X. F. Wang, J. K. Yang, I-S Yeo, D. H. Lee, O. H. Nam, U. I. Chung, J. T. Moon, B-I Ryu, “Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor Application”, Electron Devices Meeting, 2006. IEDM '06. International 11-13 Dec. 2006 Page(s):1 – 4 (2006. 11. 11)
31. H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, Y. J. Park., “Highly stable temperature characteristics of InGaN blue laser diodes”, Appl. Phys. Lett. V89, 031122, (2006.07.17.)
30. Sung-Nam Lee*, S. Y. Cho, H. Y. Ryu, J. K. Son, T. Sakong, H. S. Paek, E. Yoon, O. H. Nam, and Y. Park, “Carrier confinement effect enhanced by Al0.2Ga0.8N/GaN multi-quantum barrier in AlInGaN based high power blue-violet laser diodes”, Phys. Stat. Sol (c), V3 N6, 2215 (2006.05.15.)
29. Joong-Kon Son, S.N. Lee, T. Sakong, H. Paek, O. Nam, and Y. Park, J. Kim, Y. H. Cho, “Analysis of optical loss measurement on blue-violet laser diodes”, Phys. Stat. Sol (c), V3 N6, 2178 (2006.05.15.)
28. J. S. Hwang, J. W. Choi, A. Gokarna, Y. H. Cho, J. K. Son, S. N. Lee, T. Sakong, H. Paek, O. H. Nam, Y. Park, “Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates”, Phys. Stat. Sol (c), V3 N6, 2195 (2006.05.12.)
27. T. Jang, S. N. Lee, O. H. Nam, and Y. Park, “Investigation of Pd/Ti/Al and Ti/Al ohmic contact materials on n-type GaN along the N-face polar direction”, (Appl. Phys. Lett., V88,193505 (2006.05.08.)
26. H. Y. Ryu, K. H. Ha, S. N. Lee, K. K. Choi, T. Jang, J. K. Son, J. H. Chae, S. H. Chae, H. S. Paek, Y. J. Sung, T. Sakong, H. K. Kim, K. S. Kim, Y. H. Kim, O. H. Nam, and Y. Park, “Single-mode blue-violet laser diodes with low beam divergence and high COD level”, IEEE Photo. Tech. Lett. V18, N9, 1001 (2006.05.01.)
25. Sung-Nam Lee*, S. Y. Cho, H. Y. Ryu, J. K. Son, H. S. Paek, T. Sakong, K. K. Choi, K. H. Ha, O. H. Nam, Y. Park, and E. Yoon, “High power GaN based blue-violet laser diodes with AlGaN/GaN multi-quantum barriers”, Appl. Phys. Lett., V88, 111101, (2006.03.13.)
24. Sung-Nam Lee*, J. K. Son, H. S. Paek, T. Sakong, E. Yoon, O.H. Nam, Y. Park, “Growth of InGaN multiple quantum wells and GaN epilayer on GaN substrate”, Physica B, V376-377, 532 (2006.04.01.)
23. H. S. Paek, T. Sakong, S. N. Lee, J. K. Son, H. Y. Ryu, O. H. Nam, and Y. J. Park, “Growth and characterization of AlxGa1-xN LEO substrate”, Physica B, V376-377, 499 (2006.04.01.)
22. O. H. Nam, K. H. Ha, H. Y. Ryu, S. N. Lee, T. Jang, K. K. Choi, J. K. Son, J. H. Chae, S. H. Chae, H. S. Paek, Y. J. Sung. T. Sakong, H. K. Kim, K. S. Kim, Y. H. Kim, Y. Park, “High power AlInGaN-based blue-violet laser diodes”, Proceedings of SPIE V. 6133, 61330N-1, (2006.02.22.)
21. J. H. Chae, H. Y. Ryu, K. S. Kim, K. H. Ha, S. H. Chae, H. K. Kim, S. N. Lee, K. K. Choi, T. Jang, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, Y. H. Kim, O. H. Nam, Y. Park, “Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes” Proceedings of SPIE. V 6121, 61210Y-1, (2006.03.03.)
20. Sung-Nam Lee*, T. Jang, J. K. Son, H. S. Paek, T. Sakong, E. Yoon, O. H. Nam, and Y. Park, “Carrier transport by formation of two dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlInGaN-based laser diode”, J. Cryst. Growth, V287, 554 (2006.01.25.)
19. J. K. Son, S.N. Lee, T. Sakong, H. Paek, W. S. Lee, O. Nam, and Y. Park, , J . S. Hwang, J. Y. Kim, Y. H. Cho , “Enhanced optical properties of InGaN MQWs with InGaN underlying layers”, J. Cryst. Growth, V287, 558 (2006.01.25.)
18. Sung-Nam Lee*, J. K. Son, H. S. Paek, T. Sakong, J. S. Kwak, K. H. Ha, E. Yoon, J. Y. Kim, Y. H. Cho, S. S. Kim, Y. J. Lee, D. Y. Noh, O. H. Nam, and Y. Park, “Investigation of thermal degradation on optical and structural properties of InGaN/InGaN MQWs”, Institute of Physics Conference Series. N185, 377 (2005. 04. 01.)
17. J. S. Kwak, K. K. Choi, T. Jang, Y. J. Sung, S. N. Lee, K. H. Ha, O. H. Nam, and Y. Park, “High power AlInGaN-based multi-quantum well laser diode with low operating current”, Institute of Physics Conference Series. N185, 303 (2005. 04.01.)
16. Sung-Nam Lee*, J. K. Son, T. Sakong, W. Lee, H. S. Paek, K. H. Kim, E. Yoon, J. Y. Kim, Y. H. Cho, S. S. Kim, Y. J. Lee, D. Y. Noh, E. Yoon, O. H. Nam, and Y. Park, “Effect of thermal damage on optical and structural properties of InGaN/InGaN MQWs grown by MOCVD ”, J. Cryst. Growth. 275. E1041 (2005.02.15.)
15. Sung-Nam Lee*, JoongKon Son, Wonseok Lee, Tan Sakong, Hosun Paek, Euijoon Yoon, Jiyoung Kim, Yong-Hoon Cho, Okhyun Nam, and Y. Park “Investigation of optical and electrical properties of Mg doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD”, J. Cryst. Growth. 272. 455 (2004.12.10.)
14. Sung-Nam Lee*, T. Sakong, W. Lee, H. S. Paek, J. K. Son, K. H. Kim, S. S. Kim, Y. J. Lee, D. Y. Noh, E. Yoon, O. H. Nam, and Y. Park, “Growth pressure dependence of residual strain and threading dislocation in the GaN layer ”, Phys. Stat. Sol (c). 1. 2458 (2004.08.11.).
13. O. H. Nam, K. H. Ha, J. S. Kwak, S. N. Lee, K. K. Choi, T. H. Chang, S. H. Chae, W. S. Lee, Y. J. Sung, H. S. Paek, J. H. Chae, T. Sakong, and Y. Park, “Characteristics of GaN-based laser diodes for post-DVD applications” Phys. Stat. Sol (a). 201. 2717 (2004.09.10.).
12. J. K. Son, T. Sakong, S. N. Lee, W. S. Lee, H. S. Paek, H. Y. Han, K. K. Choi, S. H. Chae, O. H. Nam, and Y. Park, “Electroluminescence from deep level transitions in an AlGaN/GaN superlattice”, Phys. Stat. Sol (a). 201. 2764 (2004.09.10.).
11. J. S. Kwak, T. Jang, K. K. Choi, Y. J. Sung, Y. H. Kim, S. Chae, S. N. Lee, K. H. Ha, O. H. Nam, and Y. Park, “ Fabrication of AlInGaN-based blue-violet laser diode with low input power and high thermal dissipation” Phys. Stat. Sol (a). 201. 2649 (2004.09.10.)
10. Y. H. Cho, C. W. Son, J. Y. Kim, B. M. Kim, W. S. Lee, S. N. Lee, J. K. Son, O. H. Nam, Y. J. Park, “Influence of thermal damage and interruption time on optical properties of InGaN quantum well structures” J. Korean Phys. Soc. 44. L792 (2004.04.15.)
9. J. O. Song, D. S. Leem, J. S. Kwak, S. N. Lee, O. H. Nam, T. Park, and T. Y. Seong, “Low resistance and transparent Ni-La solid solution/Au ohmic contacts to p-type GaN”, Appl. Phys. Lett, 84. 1504 (2004.03.01.)
8. Sung-Nam Lee*, Tan Sakong, Wonseok Lee, Hosun Paek, Joongkon Son, Euijoon Yoon, Okhyun Nam, and Y. Park, “Characterization of optical and electrical quality in Mg doped InxGa1-xN grown by MOCVD”, J. Cryst. Growth, 261, 249 (2004.01.19.).
7. Y. H. Cho, S. K. Lee, H. S. Kwak, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, “Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters”, Appl. Phys. Lett, 83, 2578 (2003.09.29.)
6. Si-Hyun Park, Jaehoon Kim, Heonsu Jeon, Tan Sakong, Sung-Nam Lee, Suhee Chae, Y. Park, Chang-Hyun Jeong, Geun-Young Yeom, and Yong-Hoon Cho, “Room temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme”, Appl. Phys. Lett, 83, 2121 (2003.09.15.)
5. O. H. Nam, K. H. Ha, J. S. Kwak, S. N. Lee, K. K. Choi, T. H. Chang, S. H. Chae, W. S. Lee, Y. J. Sung, H. S. Paek, J. H. Chae, T. Sakong, and Y. Park, “Recent progress of high power GaN-based violet laser diodes” Phys. Stat. Sol (c). 00, 2278 (2003.10.14.)
4. Sung-Nam Lee*, Tan Sakong, Wonseok Lee, Hosun Paek, Moonsuk Seon, In-Hwan Lee, Okhyun Nam, and Yongjo Park. “Characterization of optical and crystal qualities in InxGa1-xN/ InyGa1-yN MQWs grwon by MOCVD”, J. Cryst. Growth, 250, 256 (2003).
3. J. S. Kwak, J. Cho, S. Chae, K. K. Choi, Y. J. Sung, S. N. Lee, O. H. Nam, and Y. Park, “Carrier transport mechanism of Pd/Pt/Au ohmic contacts to p-GaN in InGaN laser diode”, Phys. Stat. Sol (A). 194, 587 (2002)
2. Min-Ho Kim, Sung-Nam Lee, Chul Huh, Serng Yerl Park, Jeong Yeul Han, Jae Myung Seo, and Seong-Ju Park, “Interfacial reaction and fermi level movement induced by sequentially deposited metals on GaN : Au/Ni/GaN”, Phys. Review B, 61, 10966 (2000)
1. Min-Ho Kim, Sung-Nam Lee, Nae-Man Park and Seong-Ju Park,”Metalorganic molecular beam epitaxy of GaN thin films on a sapphire substrates”, Jpn. J. Appl. Phys. 39, 6170 (2000)