1. Sung-Nam Lee, W. Lee, S. H. Cho, I. H. Lee, C. Son, O. H. Nam, and Y. Park, “Nitride semiconductor light emitting device”, US 6,744,064 (06/01/2004) , KR 10-0425341 (3/19/2004), JP 2001-031298
2. Sung-Nam Lee, T. Sakong, and K. H. Ha, “Semiconductor optoelectronic device”, KR 10-0755621 (2007.08.29.), US 7,058,105 (Registration, 06/06/2006),
3. W. Lee, K.H. Ha, J. S. Kwak, S. N. Lee, H. S. Paek, T. Sakong, “Semiconductor device having superlattice semiconductor layer and method of manufacturing the same”, US 6,992,318 (Registration, 01/31/2006), KR P2003-0053889 (8/04/2003)
4. T. Sakong, Sung-Nam Lee, H. S. Paek, W. Lee, J. K. Son “Growth method of compound semiconductor laser diode”, US 951,905, (Pending 9/29/2004), JP 2004-300292 (Pending, 10/14/2004), EP 04256329.6 (Pending, 10/14/2004), CN 200410088165.5 (10/14/2004), KR P2003-0072499 (10/17/2003)
5. K. H. Ha, J. S. Kwak, J. H. Chae, Sung-Nam Lee “Semiconductor laser device” , P2004-0010661, JP 2005-041247 (pending, 2/17/2005), CN 200510065668.5 (Pending, 2/18/2005), KR P2004-0010661 (2/18/2004)
6. J. K. Son, H. Y. Ryu, T. Sakong, H. S. Paek, Sung-Nam Lee, “Semiconductor opto-electronic device”, KR 10-0837404 (2008.06.04)
7. T. Sakong, J. K. Son, H. S. Paek, Sung-Nam Lee, “Nitride based compound semiconductor light emitting device”, KR 10-0818269 (2008.03.25)
8. J. K. Son, T. H. Jang, Y. J. Sung, T. Sakong, H. S. Paek, Sung-Nam Lee, “Laser diode having ridge portion”, KR 10-1221067, (2013. 01. 04)
9. H. S. Paek, Y. J. Sung, K. H. Ha, J. K. Son, Sung-Nam Lee, “Semiconductor substrate having low defects and methodof manufacturing the same”, KR 10-0773555, (2007. 10. 30)
10. T. Sakong, J. K. Son, H. S. Paek, Sung-Nam Lee, “Nitride-based semiconductor light emitting device and method of manufacturing the same”, KR 10-1234783, (2013. 02. 13)
11. H. S. Paek, Sung-Nam Lee, T. Sakong, “Manufacturing method of nitride semiconductor light emitting device”, KR 10- 0956200 (2010. 04. 27)
12. H. S. Paek, Sung-Nam Lee, J. W. Lee, I. H. Jung, Y. J. Sung, “Growth method of nitride single crystal and manufacturing method of nitride semiconductor light emitting device”, KR 10-1101133, (2011.12.26)
13. Sung-Nam Lee, S. J. Shin, D. S. Oh, “METHOD FOR FORMING NITRIDE THIN FILM ON m-PLANE SAPPHIRE SUBSTRATE AND NITRIDE SEMICONDUCTOR MANUFACTURED BY THE SAME”, KR-10-1277365, (2013. 06. 13)
14. Sung-Nam Lee, J. J. Jang, O. H. Nam, “High quality nonpolar /semipolar semiconductor device and manufacturing method thereof”, KR-10-1082784, (2011.11.07)
15. Sung-Nam Lee, J. W. Choi, K. B. Nam, I. H. Hwang, “High efficiency light emitting diode”, KR- 1020130038050 (2013. 04. 17.)
16. H. S. Kim, Sung-Nam Lee, S. M. Jung, “Method for manufacturing ohmic contact and ohmic contact manufactured by the same”, KR 10-1317106, (2013. 10. 02)
17. Sung-Nam Lee, D. S. Oh, K. R. Song, M. J. Shin, “High quality nitride semiconductor thin film and manufacturing method thereof”, KR 10-1333678 (2013. 11. 21.)
18. H. S. Kim, Sung-Nam Lee, S. M. Jung, “Method for manufacturing p-GaN ohmic electrode and p-GaN ohmic electrode manufactured by the same”, KR 10-1372352, (2014. 03. 04.)
19. Sung-Nam Lee, K. W. Kim, H. S. Son, N, J. Choi, “Semipolar nitride-based light emitting devices with ZnO transparent electrode”, KR 10-1389049, (2014. 04. 18.)
20. S. M. Jung, Sung-Nam Lee, H. S. Kim, “Method for manufacturing semiconducting device and semiconducting device manufactured by using the same”, KR 10-1450268, (2014. 08. 13.)
21. Sung-Nam Lee, S. H. Han, "p-p electrode type light emitting diode and n-n electrode type light emitting diode”, KR 10-1678763, (2016. 11. 16)
22. Sung-Nam Lee, “Optoelectronic devices and method for manufacturing thereof”, KR 10-1736615, (2017. 05. 10)